کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8044300 | 1518918 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect on the electrical and morphological properties of Bi incorporation into ZnO:Ga and ZnO:Al thin films deposited by confocal magnetron sputtering
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
This paper reports the effect on the electrical and morphological properties of co-doping ZnO thin films with Bi and Al or Ga. To do so, a confocal sputtering geometry was used with a Bi target and two intrinsically doped ZnO:Ga and ZnO:Al targets. By depositing at an intentional heating of 200â¯Â°C and applying a post-deposition thermal treatment at 350â¯Â°C and 300â¯Â°C, for ZnO:Ga,Bi and ZnO:Al,Bi, respectively, electrical resistivity values of 1.3â¯Ãâ¯10â3â¯Î©â¯cm and 4.8â¯Ãâ¯10â4â¯Î©â¯cm were achieved, with an optical transmittance above 80%. The X-ray diffraction data shows that all doped ZnO films have a wurtzite hexagonal structure with preferential crystal growth perpendicular to the (002) plane. The Seebeck coefficient was measured for the ZnO:Al,Bi films, where a maximum value of â48â¯Î¼Vâ¯Kâ1 was registered. The optimized electrical properties were correlated with the preferential crystalline texture along [001] and the corresponding current density applied to the Bi dopant target, J(Bi). ZnO:Al,Bi films present out-of-plane compression stress, which concomitantly increases with J(Bi), due to higher compact volume of unit cell with lower lattice parameter c when compared with the undoped ZnO. By controlling the incorporation of Bi, the deposition temperature and the post-deposition thermal treatment temperature, improvements on the thermoelectric power factor of ZnO:Ga and ZnO:Al thin films can be achieved.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 152, June 2018, Pages 252-260
Journal: Vacuum - Volume 152, June 2018, Pages 252-260
نویسندگان
F.C. Correia, P.B. Salvador, J.M. Ribeiro, A. Mendes, C.J. Tavares,