کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8044346 | 1518918 | 2018 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Mechanical characteristics of hydrogen-implanted crystalline silicon after post-implantation annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Knowing the mechanical properties of single crystal silicon after implantation with hydrogen and annealing are important for “smart cut” process and in improving ultra-precision cutting of silicon. There is limited information on hardness and modulus of such silicon. In this article, the effect of hydrogen implantation dose and post-implantation annealing on silicon hardness and modulus were investigated. Continuous implanted silicon layers, from the surface to the depth of â¼500â¯nm, were produced. Samples with three different implantation doses and with post-implantation annealing at 350â¯Â°C and 400â¯Â°C were prepared. Hardness and modulus were obtained through dynamic nanoindentation, while structural properties were evaluated by Rutherford backscattering spectroscopy and high resolution x-ray diffraction. Hardness and modulus were significantly reduced after annealing for the highest implantation dose. With the annealing, the implantation-induced strain had the least relaxation for the lowest implantation dose. The obtained results could be useful for understanding the role of hydrogen in nano-cutting of hydrogen-implanted silicon.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 152, June 2018, Pages 40-46
Journal: Vacuum - Volume 152, June 2018, Pages 40-46
نویسندگان
Suet To, Emil V. JelenkoviÄ, Lyudmila V. Goncharova, Sing Fai Wong,