کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8044435 | 1518919 | 2018 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An investigation on performance enhancement for KF post deposition treated CIGS solar cells fabricated by sputtering CIGS quaternary targets
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Copper Indium Gallium Selenide (Cu(In,Ga)Se2, CIGS) absorbers were fabricated by sputtering from quaternary CIGS targets and post-selenization. Potassium (K) was doped into absorbers by potassium fluoride post deposition treatment (KF-PDT). The performances of cells and the concentration distribution of alkali elements were investigated. Recombination of CIGS cells was also detected. The introduction of K led to an increase in efficiency from 11.1% for K-free cells to 14.9% for K-doped cells, with higher open-circuit voltage (Voc). For depth profile of alkali elements in absorbers, the content of Na decreased and the content of K increased after KF-PDT. The decrease of interface recombination at CIGS/CdS interfaces is considered to be the reason for the enhanced efficiency.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 151, May 2018, Pages 233-236
Journal: Vacuum - Volume 151, May 2018, Pages 233-236
نویسندگان
Xunyan Lyu, Daming Zhuang, Ming Zhao, Qianming Gong, Leng Zhang, Rujun Sun, Yaowei Wei, Xiao Peng, Yixuan Wu, Guoan Ren,