Structural and dielectric properties of Au/perylene-66/p-Si/Al hybrid heterojunction diode

Perylene-66 thin films were efficiently prepared at room temperature utilizing thermal evaporation technique (TET). The XRD and FT-IR of the powder and the as-deposited film were examined. A hybrid (organic/inorganic) heterojunction device based on perylene-66 growth onto p-type silicon wafer was characterized by the impedance spectroscopy (IS) method in the frequency range from 100 Hz to 2 MHz and the temperature range from 303 K to 383 K in dark. The Cole-Cole plots show 2 relaxation mechanisms for all temperatures. The maximum barrier height WM value is 0.26 eV. The AC conductivity is found to comply Jonscher's universal power law, and the correlated barrier hopping was observed to be the predominant conduction mechanism for the charge carrier transport.