کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8044530 | 1518920 | 2018 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Synchrotron analysis of structure transformations in V and V/Ag thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Synchrotron analysis of structure transformations in V and V/Ag thin films Synchrotron analysis of structure transformations in V and V/Ag thin films](/preview/png/8044530.png)
چکیده انگلیسی
Crystal structure transformations in V(25â¯nm)/SiO2(001) and V(25â¯nm)/Ag(25â¯nm)/SiO2(001) thin films during annealing in vacuum of 10â3â¯Pa in the temperature range from 400â¯Â°C to 600â¯Â°C have been investigated by synchrotron X-ray powder diffraction. Crystal lattice parameters of VOx phase were evaluated for all transformations stages as well as its tetragonality degree. Additional techniques such as in-situ electron diffraction, secondary ion mass-spectrometry and transmission electron microscopy have been applied as well. Introduction of the Ag layer affects the V film structure and its oxidation property during annealing. The body-centered monoclinic (bcm) lattice forms in V films after annealing. On the other hand, presence of the Ag layer leads to formation of the body-centered tetragonal (bct) structure during annealing at the same temperature. Ag suppresses oxygen incorporation into the film during annealing due to its diffusion into V grain boundaries and following diffusion induced grain boundary migration, leading to decrease of vanadium grains size. Mentioned above structural changes have not been detected for samples annealed in a vacuum of 10â7â¯Pa in the same temperature range.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 150, April 2018, Pages 186-195
Journal: Vacuum - Volume 150, April 2018, Pages 186-195
نویسندگان
A.K. Orlov, I.O. Kruhlov, O.V. Shamis, I.A. Vladymyrskyi, I.E. Kotenko, S.M. Voloshko, S.I. Sidorenko, T. Ebisu, K. Kato, H. Tajiri, O. Sakata, T. Ishikawa,