Wave vector filtering effect in a magnetically and electrically confined GaAs/AlxGa1-xAs heterostructure with a δ-doping

We report on a wave vector filtering (WVF) effect for electrons across a hybrid magnetic-electric-barrier (MEB) nanostructure with a δ-doping, which can be experimentally realized by depositing a ferromagnetic (FM) stripe and a Schottky-metal (SM) stripe on top and bottom of a GaAs/AlxGa1-xAs heterostructure, respectively, and using molecular beam epitaxy (MBE), An apparent WVF effect still exists even if a δ-doping is embedded into this device. Moreover, its degree can be controlled by changing weight and/or position of the δ-doping. Thus, this device can serve as a structurally-tunable electron-momentum filter for nanoelectronics.