کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8044954 | 1518948 | 2015 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Composition and optical properties of amorphous Al-MoSexOy thin films and electrical characteristics of Al-MoSexOy field effect transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Composition and optical properties of amorphous Al-MoSexOy thin films and electrical characteristics of Al-MoSexOy field effect transistors Composition and optical properties of amorphous Al-MoSexOy thin films and electrical characteristics of Al-MoSexOy field effect transistors](/preview/png/8044954.png)
چکیده انگلیسی
Al-MoSexOy (un-doped and Al-doped MoSexOy) films are prepared by radio frequency (RF) magnetron sputtering, and influence of the Al doping contents on the structure, composition and optical properties of the Al-MoSexOy films has been studied. We find that the amount of the Al can modulate the Mo4+/Mo5+/Mo6+ composition ratios and tune the optical band gap of the Al-MoSexOy film. The concentrations of the higher molybdenum oxidation states (Mo5+, Mo6+) increase, and the value of the band gap increase from 1.86 to 2.90Â eV with the increment of the Al doping contents. Back-gated field effect transistors (FETs) have been fabricated and investigated by utilizing the sputtered Al-MoSexOy film channel. The incorporation of the Al makes the ambipolar FET device based on un-doped MoSexOy channel into p-type FET. P-type conductive FET based on 5.2% Al-MoSexOy channel has the highest field-effect mobility (55.2Â cm2Â Vâ1Â sâ1) and preferable Ion/Ioff ratio (â¼104).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 121, November 2015, Pages 42-47
Journal: Vacuum - Volume 121, November 2015, Pages 42-47
نویسندگان
Ning Li, Jie Su, Li-ping Feng, Da-peng Li, Zheng-tang Liu,