کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8045191 | 1518968 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Low temperature deposition of SiOx insulator film with newly developed facing electrodes chemical vapor deposition
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Low temperature deposition of SiOx insulator film with newly developed facing electrodes chemical vapor deposition Low temperature deposition of SiOx insulator film with newly developed facing electrodes chemical vapor deposition](/preview/png/8045191.png)
چکیده انگلیسی
Insulating SiOx film was deposited with newly developed plasma source at low temperature for fabrication of flexible devices on plastic substrate. The plasma was generated with electromagnetic field by two facing electrodes including magnets inside and covered with SiO2 targets. The higher deposition rate was achieved from 2.0 to 33Â nm/min, with the mixture of tetramethylsilane and oxygen as source gases. The insulating properties were obtained as 3Â ÃÂ 10â8Â A/cm2 at the electric field of 1Â MV/cm, and the breakdown voltage of 5Â MV/cm at 1Â ÃÂ 10â6Â A/cm2 for the film deposition rate at 11.6Â nm/min. High density plasma enhanced by magnetic field would be the hopeful solution for gate insulator deposited at high deposition rate with low temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 101, March 2014, Pages 189-192
Journal: Vacuum - Volume 101, March 2014, Pages 189-192
نویسندگان
Tokiyoshi Matsuda, Mamoru Furuta, Takahiro Hiramatsu, Hiroshi Furuta, Toshiyuki Kawaharamura, Takashi Hirao,