Deposition of microcrystalline intrinsic silicon by the Electrical Asymmetry Effect technique

► The EAE technique is a new deposition method of thin silicon films. ► The EAE technique allows control the deposition rate independently on electrodes. ► With the EAE discharge two conditions of the plasma are combined: low ion energy and a high density of electrons. ► With EAE technique better deposited films uniformity is achieved. ► With EAE technique the deposition rate of thin silicon films increased without quality drop.