Thermally stable TiN Schottky contact on AlGaN/GaN heterostructure

► Electrical performance and thermal stability of AlGaN/GaN HFETs with TiN gate is presented. ► TiN-gate AlGaN/GaN HFETs is stable at 600 °C for 1 hour or 850 °C for several minutes. ► We noticed that the sheet resistance of the TiN films increased after thermal treatment. ► TiN-gate AlGaN/GaN HFET is a candidate for a gate material enduring high-temperature process.