کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
805375 | 905138 | 2009 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Copper polishing with a polishing pad incorporating abrasive grains and a chelating resin
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی صنعتی و تولید
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This study sought to decrease dishing and erosion as they cause reduced yield in copper chemical mechanical polishing (Cu-CMP), which is a multilayer interconnect process that is a part of the overall semiconductor manufacturing process. We prepared a polishing pad that incorporated abrasive grains (AC Pad) and used a chelating resin in the matrix (resin). Moreover, we studied whether this polishing pad was applicable to the Cu-CMP process. Results indicated that the pad was selectively abrasive to copper (Cu) and that in the polishing of patterned wafers, it vastly decreased dishing to 1/8th and erosion to half of their respective levels in abrasive polishing. Therefore, the pad has considerable potential for use in Cu-CMP.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Precision Engineering - Volume 33, Issue 2, April 2009, Pages 167–174
Journal: Precision Engineering - Volume 33, Issue 2, April 2009, Pages 167–174
نویسندگان
Makoto Sato, Tetsuya Kameyama, Toru Nonami,