Investigations of the possibility of determination of thermal parameters of Si and SiGe samples based on the Photo Thermal Radiometry technique

This paper presents results of investigations of the possibility of determination of thermal parameters (thermal conductivity, thermal diffusivity) of silicon and silicon germanium crystals from the frequency characteristics of the Photo Thermal Radiometry (PTR) signal. The theoretical analysis of the influence of the mentioned parameters on the PTR signal has been presented and discussed. The values of the thermal and recombination parameters have been extracted from the fittings of the theoretical to experimental data. The presented approach uses the reference Si sample whose thermal and recombination parameters are known.