کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8147558 | 1524150 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Nanometer-scale etching of CoFeB thin films using pulse-modulated high density plasma
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Pulse-modulated inductively coupled plasma reactive ion etching of nanometer-scale patterned CoFeB thin films was performed in CH4/O2/Ar gas mixture. As the pulse on-off duty ratio decreased, the etch selectivity of CoFeB/TiN slightly increased and the etch profiles were improved. Moreover, the etch selectivity of the CoFeB films and the etch profiles were improved with the increase in the pulse frequency of the plasma. X-ray photoelectron spectroscopy revealed that during the pulse-modulated etching in the CH4/O2/Ar gas mixture, some polymeric layers were formed on the CoFeB films, which helped prevent the lateral etching and increased the etch selectivity. Consequently, nanometer-scale etching of CoFeB thin films patterned with TiN hard masks could be achieved using pulsed-modulated plasma in CH4/O2/Ar gas mixture.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 18, Issue 9, September 2018, Pages 968-974
Journal: Current Applied Physics - Volume 18, Issue 9, September 2018, Pages 968-974
نویسندگان
Doo Hyeon Cho, Jae Yong Lee, Jae Sang Choi, Chee Won Chung,