Preparation of Copper Indium Sulfide Film by Electro-Deposition Method

Copper indium sulfide (CuInS2, CIS2) film was prepared by an electro-deposition method. Uv-vis spectrophotometer test result shows that the band gap of the electroplated CIS2 film is 1.5 eV. X-ray photoelectron spectroscopy (XPS) analysis reveals that the Cu, In and S signals corresponded to valence state (+1, +3 and −2) of three elements in CIS2 film, respectively. The photoelectrical properties of the CIS2 film were characterized by linear sweep voltammetry measurements under the dark and illumination. The I–V characteristic is linear under the dark and illumination, and the slope gap is 0.6×10−3. We also simulated the band gap (1.5 eV) of the CIS2 film with chalcopyrite structure prepared by electroplating experiment using DMol3 and CASTEP modules, respectively. The molecular structure model of electroplated copper indium sulfide film has been established, and the X-ray diffraction simulative spectrum has been obtained by Materials Studio, which has good agreement with the experiment result.