Effect of AlN layer on the resistive switching properties of TiO2 based ReRAM memory devices

Effect of AlN layer on the resistive switching properties of TiO2 based ReRAM memory devices

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 18, Issue 1, January 2018, Pages 102-106

Bhawani Pratap Singh Rathore, Ravi Prakash, Davinder Kaur,