کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8154826 | 1524802 | 2016 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High-spin configuration of Mn in Bi2Se3 three-dimensional topological insulator
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Electron paramagnetic resonance was used to investigate Mn impurity in Bi2Se3 topological insulator grown by the vertical Bridgman method. Mn in high-spin S=5/2, Mn2+, configuration was detected regardless of the conductivity type of the host material. This means that Mn2+(d5) energy level is located within the valence band, and Mn1+(d6) energy level is outside the energy gap of Bi2Se3. The electron paramagnetic resonance spectrum of Mn2+ in Bi2Se3 is characterized by the isotropic g-factor |g|=1.91 and large axial parameter D=â4.20 GHz h. This corresponds to the zero-field splitting of the Kramers doublets equal to 8.4 GHz h and 16.8 GHz h, respectively, which is comparable to the Zeeman splitting for the X-band. Mn in Bi2Se3 acts as an acceptor, effectively reducing native-high electron concentration, compensating selenium vacancies, and resulting in p-type conductivity. However, Mn-doping simultaneously favors formation of native donor defects, most probably selenium vacancies. For high Mn-doping it may lead to the resultant n-type conductivity related with strong non-stoichiometry and degradation of the crystal structure - switching from Bi2Se3 to BiSe phase.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 419, 1 December 2016, Pages 301-308
Journal: Journal of Magnetism and Magnetic Materials - Volume 419, 1 December 2016, Pages 301-308
نویسندگان
Agnieszka Wolos, Aneta Drabinska, Jolanta Borysiuk, Kamil Sobczak, Maria Kaminska, Andrzej Hruban, Stanislawa G. Strzelecka, Andrzej Materna, Miroslaw Piersa, Magdalena Romaniec, Ryszard Diduszko,