کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8156791 | 1524847 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Backhopping in magnetic tunnel junctions: Micromagnetic approach and experiment
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Backhopping in magnetic tunnel junctions: Micromagnetic approach and experiment Backhopping in magnetic tunnel junctions: Micromagnetic approach and experiment](/preview/png/8156791.png)
چکیده انگلیسی
Micromagnetic simulations of Current Induced Magnetization Switching (CIMS) loops in CoFeB/MgO/CoFeB exchange-biased Magnetic Tunnel Junctions (MTJ) are discussed. Our model uses the Landau-Lifshitz-Gilbert equation with the Slonczewski׳s Spin-Transfer-Torque (STT) component. The current density for STT is calculated from the applied bias voltage and tunnel magnetoresistance which depends on the local magnetization vectors arrangement. We take into account the change in the anti-parallel state resistance with increasing bias voltage. Using such model we investigate influence of the interlayer exchange coupling, between free and reference layers across the barrier, on the backhopping effect in anti-parallel to parallel switching. We compare our simulated CIMS loops with the experimental data obtained from MTJs with different MgO barrier thicknesses.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 374, 15 January 2015, Pages 451-454
Journal: Journal of Magnetism and Magnetic Materials - Volume 374, 15 January 2015, Pages 451-454
نویسندگان
Marek Frankowski, Witold SkowroÅski, Maciej Czapkiewicz, Tomasz Stobiecki,