کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8156818 | 1524847 | 2015 | 17 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Giant tunneling electroresistance in ferroelectric-gated silicene junction
ترجمه فارسی عنوان
مقاومت الکتریکی تونلی غول پیکر در اتصال سیلیسن فیدر
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
The electroresistance in silicene-based normal/ferroelectric-gated/normal junction is investigated. The energy gap in silicene can be tuned by electric field. The spontaneous electric polarization in ferroelectric (FE) can be switched by external electric field. Due to the combination of these properties, we find that the studied junction may generate tunneling electroresistance (TER) exceeding 109%. The conductance ratio of ON to OFF-state, GON/GOFF, is found to be larger than 107, enhanced by increasing the thickness of the barrier or increasing the magnitude of electric polarization in the FE-layer. The giant TER effect is directly related to the buckled lattice and the presence of spin-orbit interaction in silicene. This work reveals the potential of silicene as a good material for application of ferroelectric random-access memory.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 374, 15 January 2015, Pages 479-483
Journal: Journal of Magnetism and Magnetic Materials - Volume 374, 15 January 2015, Pages 479-483
نویسندگان
Assanai Suwanvarangkoon, Bumned Soodchomshom,