کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8165911 | 1526222 | 2018 | 16 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Enhancement of effective linear RF surface resistance of superconducting surfaces by microscopic topography
ترجمه فارسی عنوان
تقویت مقاومت خطی مادون قرمز سطوح ابررسانا با توپوگرافی میکروسکوپی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
چکیده انگلیسی
Minimization of Radio-Frequency (RF) dissipation on superconducting surfaces is of interest for many applications. A prominent one is the use of Superconducting RF (SRF) cavities for charged particle acceleration. In addition to our previous investigation which characterized the occurrence of high-field non-linear losses by microscopic surface topography, the topic of increased linear losses as a function of surface topographic character merits consideration. Surfaces with isotropic homogeneous surface topography may be well characterized by power spectral density (PSD) derived from systematic height measurements. PSD characterizations of representative niobium cavity surface treatments have been developed: Electro-Polishing (EP), Nano-Mechanical Polishing (NMP) and Centrifugal Barrel Polishing (CBP) A perturbation model based on PSD statistical analysis is used to calculate additional RF loss on these surfaces when superconducting. The model assesses the penetration depth effects for a superconductor. We thus estimate the RF power dissipation ratio between these rough surfaces and an ideal smooth surface.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 904, 1 October 2018, Pages 124-129
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 904, 1 October 2018, Pages 124-129
نویسندگان
Chen Xu, Charles E. Reece, Michael J. Kelley, Peter Takacs,