P-MOSFET latch-based monolithic signal-processing circuit for nuclear event detector

The measured response time of the fabricated chip is 12.2 ns. After measuring the electrical characteristics of the fabricated chip, the chip is exposed to  60Co gamma rays at a dose of 1.14 Mrad (Si). Even after exposure to radiation, the performance of the irradiated chip is nearly identical to that of a non-irradiated chip. To evaluate the upset threshold with regard to the dose rate of the fabricated chip, the chip is also exposed to prompt gamma rays with different dose rates, and the measured dose rate upset threshold is found to exceed 1.9×107rad(Si)/s.