Single-shot pulse duration and intensity diagnostic for 10-ps MeV gamma pulses based on interferometry

To measure the temporal width and the intensity evolution versus time of a MeV gamma pulse generated by a Compton Scatter Source, a time-space conversion method is proposed. This design is based on the consideration that the temporal length of the MeV pulse is proportional to the spatial length of the pulse in a certain semiconductor. The spatial length and the intensity evolution versus time of the MeV pulse can be obtained by recording the region of the refractive index change that is induced by the MeV pulse. The simulation suggests that the equivalent temporal spread of a mono-energy MeV δ pulse in a bulk semiconductor is on the order of picoseconds and does not vary significantly with photon energy and material type. According to our analysis, the excess carrier generation time, excess carrier diffusion and recombination do not significantly influence the temporal resolution of this method. The temporal response of the refractive index change to a MeV pulse is also fast enough to meet the measurement requirements. The signal generation process for measuring a 10-ps MeV pulse with a 200-fs probe beam is analyzed, revealing that the transverse size of the MeV pulse does not influence the temporal resolution of this method.