Characterization of silicon photomultipliers and validation of the electrical model

This paper introduces a systematic way to measure most features of the silicon photomultipliers (SiPM). We implement an efficient two-laser procedure to measure the recovery time. Avalanche probability was found to play an important role in explaining the right behavior of the SiPM recovery process. Also, we demonstrate how equivalent circuit parameters measured by optical tests can be used in SPICE modeling to predict details of the time constants relevant to the pulse shape. The SiPM properties measured include breakdown voltage, gain, diode capacitor, quench resistor, quench capacitor, dark count rate, photodetection efficiency, cross-talk and after-pulsing probability, and recovery time. We apply these techniques on the SiPMs from two companies: Hamamatsu and SensL.