کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8168558 1526295 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
P-stop isolation study of irradiated n-in-p type silicon strip sensors for harsh radiation environments
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم ابزار دقیق
پیش نمایش صفحه اول مقاله
P-stop isolation study of irradiated n-in-p type silicon strip sensors for harsh radiation environments
چکیده انگلیسی
In order to determine the most radiation hard silicon sensors for the CMS Experiment after the Phase II Upgrade in 2023 a comprehensive study of silicon sensors after a fluence of up to 1.5×1015neq/cm2 corresponding to 3000fb−1 after the HL-LHC era has been carried out. The results led to the decision that the future Outer Tracker (20cm
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 831, 21 September 2016, Pages 38-43
نویسندگان
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