First results of a Double-SOI pixel chip for X-ray imaging

Aiming at low energy X-ray imaging, a prototype chip based on Double-SOI process was designed and tested. The sensor and pixel circuit were characterized. The long lasting crosstalk issue in SOI technology was understood. The operation of pixel was verified with a pulsed infrared laser beam. The depletion of sensor revealed by signal amplitudes is consistent with the one revealed by I-V curve. An s-curve fitting resulted in a sigma of 153 e− among which equivalent noise charge (ENC) contributed 113 e−. It's the first time that the crosstalk issue in SOI technology was solved and a counting type SOI pixel demonstrated the detection of low energy radiation quantitatively.