کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8168654 | 1526295 | 2016 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
CMOS pixel sensors on high resistive substrate for high-rate, high-radiation environments
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A depleted CMOS active pixel sensor (DMAPS) has been developed on a substrate with high resistivity in a high voltage process. High radiation tolerance and high time resolution can be expected because of the charge collection by drift. A prototype of DMAPS was fabricated in a 150 nm process by LFoundry. Two variants of the pixel layout were tested, and the measured depletion depths of the variants are 166 μm and 80 μm. We report the results obtained with the prototype fabricated in this technology.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 831, 21 September 2016, Pages 94-98
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 831, 21 September 2016, Pages 94-98
نویسندگان
Toko Hirono, Marlon Barbero, Patrick Breugnon, Stephanie Godiot, Laura Gonella, Tomasz Hemperek, Fabian Hügging, Hans Krüger, Jian Liu, Patrick Pangaud, Ivan Peric, David-Leon Pohl, Alexandre Rozanov, Piotr Rymaszewski, Anqing Wang, Norbert Wermes,