کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8169745 | 1526302 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of very high radiation on SiPMs
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
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چکیده انگلیسی
During the last 5 years we have successfully completed R&D for the instrumentation of silicon photo multipliers (SiPMs) for the CMS HCAL Phase 1 upgrade in 2018. Much focus was put on radiation damage during these years. For the HCAL we expect a maximum total dose of 1012 n/cm2 for a total lifetime integrated luminosity of 3000 fbâ1. Good correlation between cell size and performance with high radiation was found during this R&D. To evaluate the possibility of using the SiPMs in the wider CMS environment we have exposed the current state of the art smallest cell SiPMs to radiation of 6Ã1012 p/cm2 in 62 MeV LIF beam line in 2014 at UCL Belgium and up to 1.3Ã1014 p/cm2 in the CERN PS 23 GeV proton beam in late 2014. The SiPM׳s main parameters were measured before and after irradiation. Here we report on the effects of noise increase and breakdown voltage shift due to the extremely high dose.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 824, 11 July 2016, Pages 111-114
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 824, 11 July 2016, Pages 111-114
نویسندگان
A. Heering, Yu Musienko, R. Ruchti, M. Wayne, A. Karneyeu, V. Postoev,