On the influence of dislocation walls in CdTe:Cl

Studies were performed on two types of chlorine-compensated cadmium telluride crystals with a different density of native dislocations walls. The crystals were investigated by current-voltage measurements, photo-induced current transient spectroscopy and absorption measurements, in the view of investigating the influence of the density of dislocation walls on their charge transport properties and electronic levels scheme. It results that a higher density of dislocation walls increases the dark current in CdTe. To the contrary, the optical absorption properties do not seem to be influenced by the presence of dislocation walls. The PICTS measurements demonstrated that a lower density of dislocation walls provides a higher concentration of compensation-related defects and a lower concentration of the defects responsible for the peaks observed at high temperature, possibly associated to donor-pair complexes.