کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8171962 | 1526327 | 2015 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Measurement of the drift velocities of electrons and holes in high-ohmic ã100ã silicon
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Measurements of the drift velocities of electrons and holes as functions of electric field and temperature in high-purity n- and p-type silicon with ã100ã lattice orientation are presented. The measurements cover electric field values between 2.5 and 50kV/cm and temperatures between 233 and 333K. For both electrons and holes differences of more than 15% are found between our ã100ã results and the ã111ã drift velocities from literature, which are frequently also used for simulating ã100ã sensors. For electrons, the ã100ã results agree with previous ã100ã measurements; however, for holes differences between 5 and 15% are observed for fields above 10kV/cm. Combining our results with published data of low-field mobilities, we derive parametrizations of the drift velocities in high-ohmic ã100ã silicon for electrons and holes for fields up to 50kV/cm, and temperatures between 233 and 333Â K. In addition, new parametrizations for the drift velocities of electrons and holes are introduced, which provide somewhat better descriptions of existing data for ã111ã silicon than the standard parametrization.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 799, 1 November 2015, Pages 81-89
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 799, 1 November 2015, Pages 81-89
نویسندگان
C. Scharf, R. Klanner,