First result on biased CMOS MAPs-on-diamond devices

The main concept of this class of devices is the capability of the charges generated in the diamond by ionizing radiation to cross the silicon-diamond interface and to be collected by the MAPS photodiodes. In this work we demonstrate that such passage occurs and measure its overall efficiency. This study has been carried out first calibrating the CMOS MAPS with monochromatic X-rays, and then testing the device with charged particles (electrons) either with and without biasing the diamond substrate, to compare the amount of signal collected.