کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8172365 | 1526329 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influence of electron track lengths on the γ-ray response of compound semiconductor detectors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The charge-trapping effect in compound semiconductor γ-ray detectors in the presence of a uniform electric field is commonly described by Hecht׳s relation. However, Hecht׳s relation ignores the geometrical spread of charge carriers caused by the finite range of primary and secondary electrons (δ-rays) in the detector. In this paper, a method based on the Shockley-Ramo theorem is developed to calculate γ-ray induced charge pulses by taking into account the charge-trapping effect associated with the geometrical spread of charge carriers. The method is then used to calculate the response of a planar CdTe detector to energetic γ-rays by which the influence of electron track lengths on the γ-ray response of the detectors is clearly shown.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 797, 11 October 2015, Pages 255-259
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 797, 11 October 2015, Pages 255-259
نویسندگان
M. Nakhostin, A. Esmaili-Torshabi,