An evidence of strong electron-phonon interaction in the neutron irradiation induced defects in silicon

Silicon material was irradiated with reactor neutrons, which unavoidably created clusters of defects. Spectral photo current measurements in the range from 0.5 eV up to 1.4 eV showed accumulation of the signal and long time relaxation behavior in some series of Si (MCZ and FZ) wafers. The proposed differential spectrum analysis method revealed the defects corresponding to strong electron-phonon coupling centers.