Manufacturing uniform field silicon drift detector using double boron layer

Novel SDDs with continuous junctions on both sides are fabricated using pure boron (PureB) depositions to create a shallow junction in the entrance window side and a continuous rectifying junction with different potentials as function of the drift coordinate in the device side. The SDDs made in this material offer lower leakage current. In addition, continuous SDD designed with two boron layers with different sheet resistances displays uniform electric field.