Vacuum ultra-violet and ultra-violet scintillation light detection by means of silicon photomultipliers at cryogenic temperature

We tested the performance of two types of silicon photomultipliers, AdvanSiD ASD-NUV-SiPM3S-P and Hamamatsu 3×3 MM-50 UM VUV2, both at room (300 K) and at liquid nitrogen (77 K) temperature: breakdown voltage, quenching resistance, signal shape, gain and dark counts rate have been studied as function of temperature. The response of the devices to ultra-violet light is also studied.