Electrical characterization and simulation of SiPMs

For this purpose, SPICE simulations of SiPMs and readout electronics have been performed. These simulations utilize an improved SiPM model consisting of resistors, capacitances and inductances. The SiPM parameters for these simulations have been determined by measuring the impedance over a wide frequency range while applying a DC voltage in forward direction and various DC voltages from zero up to the SiPM breakdown voltage in order to determine the behavior under operating conditions. The impedance measurements, the electrical model and the resulting simulations are presented. The impact of different setups and the electrical properties of the SiPM is discussed.