Recent results of the 3D-stripixel Si detectors

The design, fabrication process and the characteristics measurements of the new 3D-stripixel detectors are presented in this paper. The optimized detectors design is simulated and analyzed with Sentaurus TCAD toolkit. The active area of the detector was studied with the laser transient current techniques (TCT) measurement. The characteristics of detector׳s 2D position sensitivity and charge collection was studied with an Alibava DAQ system.