کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8175503 | 1526361 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Evaluation of KEK n-in-p planar pixel sensor structures for very high radiation environments with testbeam
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Various structures for n-in-p planar pixel sensors have been developed at KEK in order to cope with the huge particle fluence in the upcoming LHC upgrades. Performances of the sensors with different structures have been evaluated with testbeam. The n-in-p devices were connected by bump-bonding to the ATLAS Pixel front-end chip (FE-I4A) and characterized before and after the irradiation to 1Ã1016 1Â MeV neq/cm2. Results of measurements with 120Â GeV/c momentum pion beam at the CERN Super Proton Synchrotron (SPS) in September 2012 are presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 765, 21 November 2014, Pages 125-129
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 765, 21 November 2014, Pages 125-129
نویسندگان
K. Motohashi, T. Kubota, K. Nakamura, R. Hori, C. Gallrapp, Y. Unno, O. Jinnouchi, S. Altenheiner, Y. Arai, M. Hagihara, M. Backhaus, M. Bomben, D. Forshaw, M. George, K. Hanagaki, K. Hara, M. Hirose, Y. Ikegami, K. Yorita,