کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8175798 | 1526364 | 2014 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of X-ray irradiation on the properties of the Hamamatsu silicon photomultiplier S10362-11-050C
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have investigated the effects of X-ray irradiation to doses of 0, 200Â Gy, 20Â kGy, 2Â MGy, and 20Â MGy on the Hamamatsu silicon-photomultiplier (SiPM) S10362-11-050C. The SiPMs were irradiated without applied bias voltage. From current-voltage, capacitance/conductance-voltage, capacitance/conductance-frequency, pulse-shape, and pulse-area measurements, the SiPM characteristics below and above breakdown voltage were determined. Significant changes of some SiPM parameters are observed. Up to a dose of 20Â kGy the performance of the SiPMs is hardly affected by X-ray radiation damage. For doses of 2 and 20Â MGy the SiPMs operate with hardly any change in gain, but with a significant increase in dark-count rate and cross-talk probability.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 762, 21 October 2014, Pages 149-161
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 762, 21 October 2014, Pages 149-161
نویسندگان
Chen Xu, Robert Klanner, Erika Garutti, Wolf-Lukas Hellweg,