کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8175894 | 1526362 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Measurement of the ratio of C3+ and O4+ ions produced by ECRIS to prepare a laser cooling experiment at storage rings
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Measurement of the ratio of C3+ and O4+ ions produced by ECRIS to prepare a laser cooling experiment at storage rings Measurement of the ratio of C3+ and O4+ ions produced by ECRIS to prepare a laser cooling experiment at storage rings](/preview/png/8175894.png)
چکیده انگلیسی
To prepare the upcoming laser cooling of relativistic C3+ ion beams at the experimental Cooler Storage Ring (CSRe), a novel experiment was performed using a reaction microscope to determine the ratio of C3+ ions in mixed ion beams of C3+ and O4+ that are produced by an Electron Cyclotron Resonance Ion Source (ECRIS). The mixed ion beams at an energy of 4Â keV/u were directed to collide on a supersonic helium gas target. Using the single-electron capture channel and the coincidence technique, the fractions of C3+ and O4+ ions in the primary beam were obtained. Using different injection gases for ECRIS, including O2, CO, CO2, and CH4, at a fixed radio-frequency power of 300Â W, the measured results showed that the fraction of C3+ ions was greater than 70% for the injection gases of CO and CO2. These measured results are very important and helpful for the upcoming laser cooling experiments.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 764, 11 November 2014, Pages 232-235
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 764, 11 November 2014, Pages 232-235
نویسندگان
X.L. Zhu, W.Q. Wen, X. Ma, J.Y. Li, W.T. Feng, R.T. Zhang, Enliang Wang, S. Yan, D.L. Guo, B. Hai, D.B. Qian, P. Zhang, S. Xu, D.M. Zhao, J. Yang, D.C. Zhang, B. Li, Y. Gao, H.B. Wang,