Performance estimation of InSb compound semiconductor detectors as a function of active area using alpha particles

We have fabricated radiation detectors using p-type indium antimonide crystals grown by liquid phase epitaxy (LPE). The current-voltage curves, energy spectra of alpha particles, and energy resolutions obtained using two different InSb detectors were compared. The alpha-particle energy resolutions were 1.8% at 24 and 42 K, using the LPE-InSb detector with wafer size of 1.0×1.5 mm2.