کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8177589 | 1526389 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of post-growth annealing on the performance of CdZnTe: In radiation detectors with different thickness
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
An effective post-growth annealing method was used to improve the performance of CdZnTe:In (CZT:In) radiation detectors. The results indicated that Te inclusions in CZT:In crystals with different thickness were eliminated completely after annealing. Both the resistivity and IR transmittance of annealed CZT:In crystals with different thickness increased obviously, which suggested that the crystal quality was improved. For the detector fabricated by annealed CZT:In slices with 2 mm thickness, the energy resolution and (μÏ)e value were enhanced about 63% and 115%, respectively. And for that fabricated by annealed CZT:In slices with 5 mm thickness, the energy resolution and (μÏ)e value were enhanced about 300% and 88%, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 737, 11 February 2014, Pages 29-32
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 737, 11 February 2014, Pages 29-32
نویسندگان
Pengfei Yu, Wanqi Jie,