کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8178374 | 1526391 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of neutron irradiation on charge collection efficiency in 4H-SiC Schottky diode
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The charge collection efficiency (CCE) in 4H-SiC Schottky diode is studied as a function of neutron fluence. The 4H-SiC diode was irradiated with fast neutrons of a critical assembly in Nuclear Physics and Chemistry Institute and CCE for 3.5 MeV alpha particles was then measured as a function of the applied reverse bias. It was found from our experiment that an increase of neutron fluence led to a decrease of CCE. In particular, CCE of the diode was less than 1.3% at zero bias after an irradiation at 8.26Ã1014 n/cm2. A generalized Hecht's equation was employed to analyze CCE in neutron irradiated 4H-SiC diode. The calculations nicely fit the CCE of 4H-SiC diode irradiated at different neutron fluences. According to the calculated results, the extracted electron Î¼Ï product (μÏ)e and hole Î¼Ï product (μÏ)h of the irradiated 4H-SiC diode are found to decrease by increasing the neutron fluence.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 735, 21 January 2014, Pages 218-222
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 735, 21 January 2014, Pages 218-222
نویسندگان
Jian Wu, Yong Jiang, Jiarong Lei, Xiaoqiang Fan, Yu Chen, Meng Li, Dehui Zou, Bo Liu,