Planar silicon sensors for the CMS tracker upgrade

The samples have been irradiated with neutrons (1 MeV) and protons (23 MeV and 23 GeV) corresponding to maximal fluences as expected for several positions of detector layers in the future tracker. Irradiations with protons of different energies have been performed to evaluate the energy dependence of the defect generation in oxygen rich material. All materials have been characterized before and after irradiations, and throughout an annealing treatment. The measurements performed on the structures include electrical sensor characterization, measurement of the collected charge injected with a beta source or laser light and bulk defect characterization. In this paper, a selection of results from the ongoing studies is presented.