کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8178689 | 1526393 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of high-dose X-ray radiation damage of silicon sensors
ترجمه فارسی عنوان
مطالعه ضایعات اشعه ایکس با اشعه ماوراء بنفش با سنسورهای سیلیکونی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
چکیده انگلیسی
The high intensity and high repetition rate of the European X-Ray Free-Electron Laser, presently under construction in Hamburg, will require pixel sensors which can stand X-ray doses up to 1Â GGy for 3Â years of operation. Within the AGIPD Collaboration the Hamburg group has systematically studied X-ray damage in silicon sensors for the dose range between 1Â kGy and 1Â GGy using strip sensors and test structures fabricated on high-ohmic n-type silicon from four different vendors. The densities of oxide charges, interface traps and surface current as function of dose and annealing conditions have been determined. The results have been implemented in TCAD simulations, and the radiation performance of strip sensors and guard-ring structures has been simulated and compared to experimental results. Finally, with the help of detailed TCAD simulations, the layout and technological parameters of the AGIPD pixel sensor have been optimized. It is found that the optimization for silicon sensors exposed to high X-ray doses is significantly different from that for non-irradiated sensors, and that the specifications of the AGIPD sensor can be met.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 732, 21 December 2013, Pages 117-121
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 732, 21 December 2013, Pages 117-121
نویسندگان
Robert Klanner, Eckhart Fretwurst, Ioana Pintilie, Joern Schwandt, Jiaguo Zhang,