کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8178701 | 1526395 | 2013 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Challenges for silicon pixel sensors at the European XFEL
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Challenges for silicon pixel sensors at the European XFEL Challenges for silicon pixel sensors at the European XFEL](/preview/png/8178701.png)
چکیده انگلیسی
A systematic experimental study of the main challenges for silicon-pixel sensors at the European XFEL is presented. The high instantaneous density of X-rays and the high repetition rate of the XFEL pulses result in signal distortions due to the plasma effect and in severe radiation damage. The main parameters of X-ray-radiation damage have been determined and their impact on p+n sensors is investigated. These studies form the basis of the optimized design of a pixel-sensor for experimentation at the European XFEL.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 730, 1 December 2013, Pages 2-7
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 730, 1 December 2013, Pages 2-7
نویسندگان
Robert Klanner, Julian Becker, Eckhart Fretwurst, Ioana Pintilie, Thomas Pöhlsen, Joern Schwandt, Jiaguo Zhang,