کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8178718 | 1526393 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Beam test results of 3D silicon pixel sensors for future upgrades
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
3D silicon has undergone an intensive beam test programme which has resulted in the successful qualification for the ATLAS Insertable B-Layer (IBL) upgrade project to be installed in 2013-2014. This paper presents selected results from this study with a focus on the final IBL test beam of 2012 where IBL prototype sensors were investigated. 3D devices were studied with 4Â GeV positrons at DESY and 120Â GeV pions at the SPS at CERN. Measurements include tracking efficiency, charge sharing, time over threshold and cluster size distributions as a function of incident angle for IBL 3D design sensors. Studies of 3D silicon sensors in an anti-proton beam test for the AEgIS experiment are also presented.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 732, 21 December 2013, Pages 141-145
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 732, 21 December 2013, Pages 141-145
نویسندگان
C. Nellist, A. Gligorova, T. Huse, N. Pacifico, H. Sandaker, On behalf of the ATLAS IBL Collaboration On behalf of the ATLAS IBL Collaboration,