کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8178751 | 1526395 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A charge collection study with dedicated RD50 charge multiplication sensors
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This study investigates the charge collection efficiency of silicon strip detectors, produced by MICRON Semiconductor Co., Ltd. within the CERN RD50 collaboration, designed specifically to understand the effect of design parameters on the onset and magnitude of charge multiplication. Charge collection measurements are performed before and after irradiation with a proton fluence of 1Ã1015 1 MeV neq/cm2 (neq/cm2) and neutron fluence ranging from 1-5Ã1015 neq/cm2. Structures on these devices include varying diffusion times and energies for the implantation process, different sensor thicknesses, the use of intermediate biased or floating strips between the readout strips, and several different strip width and pitch geometries. The charge collection for these devices is studied as a function of the bias voltage, looking for indications of charge multiplication. Results are compared to standard float zone 300μm thick silicon strip sensors having a strip width of 25μm and pitch of 80μm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 730, 1 December 2013, Pages 62-65
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 730, 1 December 2013, Pages 62-65
نویسندگان
C. Betancourt, T. Barber, M. Hauser, K. Jakobs, S. Kuehn, U. Parzefall, S. Wonsak,