کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8178754 | 1526395 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Investigations on radiation hardness of DEPFET sensors for the Belle II detector
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Investigations on radiation hardness of DEPFET sensors for the Belle II detector Investigations on radiation hardness of DEPFET sensors for the Belle II detector](/preview/png/8178754.png)
چکیده انگلیسی
In the upgrade of the Belle detector at KEK (Tsukuba, Japan) the two innermost layers of the vertex detector will be realized by a pixel detector (PXD) consisting of DEPFET (DEpleted P-channel Field Effect Transistor) matrices. As the position of the detector will be very close to the beam pipe, it will suffer from intense radiation levels. The main radiation background is the luminosity related 4-fermion final state radiation, which damages the silicon bulk material and the silicon dioxide from the gate contacts. With the dose expected at Belle II, the DEPFET suffers mainly from additional leakage current and increase in noise. In addition, defects in the silicon dioxide change transistor parameters, e.g. the threshold voltage. We will show results on the hardness factor of electrons after a 10Â MeV electron irradiation which was performed in the dose and energy range relevant for the PXD. In addition, we present X-ray irradiations of DEPFET equivalent test structures and compare radiation hardness for different oxide parameters in the prototype production.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 730, 1 December 2013, Pages 79-83
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 730, 1 December 2013, Pages 79-83
نویسندگان
Andreas Ritter, Ladislav Andricek, Tobias Kleinohl, Christian Koffmane, Florian Lütticke, Carlos Marinas, Hans-Günther Moser, Jelena Ninkovic, Rainer Richter, Gerhard Schaller, Martina Schnecke, Florian Schopper,