کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8178789 | 1526395 | 2013 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of displacement damage effects on MOS capacitors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
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چکیده انگلیسی
Displacement damage effect on MOS capacitors is analyzed in this work with the aid of TCAD simulations. A noticeable capacitance reduction in the accumulation mode is observed in the High Frequency C-V characteristic curve after a 24Â GeV proton irradiation. This effect is clearly distinguishable from ionizing damage effects, otherwise negligible under the specific conditions of the experiment. The capacitance reduction is identified with the increase of the substrate resistivity, due to the modification of its effective doping concentration. Supported on a well-established traps model, the expected displacement damage defects are simulated as a function of the fluence, allowing the identification of donor trap levels as the responsible of the phenomenon for p-type substrate MOS capacitors.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 730, 1 December 2013, Pages 91-94
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 730, 1 December 2013, Pages 91-94
نویسندگان
P. Fernández-MartÃnez, F.R. Palomo, S. Hidalgo, C. Fleta, F. Campabadal, D. Flores,