کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8178790 | 1526394 | 2013 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Development and characterization of the latest X-ray SOI pixel sensor for a future astronomical mission
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have been developing active pixel sensors based on silicon-on-insulator technology for future X-ray astronomy missions. Recently we fabricated the new prototype named “XRPIX2”, and investigated its spectroscopic performance. For comparison and evaluation of different chip designs, XRPIX2 consists of 3 pixel types: Small Pixel, Large Pixel 1, and Large Pixel 2. In Small Pixel, we found that the gains of the 68% pixels are within 1.4% of the mean value, and the energy resolution is 656Â eV (FWHM) for 8Â keV X-rays, which is the best spectroscopic performance in our development. The pixel pitch of Large Pixel 1 and Large Pixel 2 is twice as large as that of Small Pixel. Charge sharing events are successfully reduced for Large Pixel 1. Moreover Large Pixel 2 has multiple nodes for charge collection in a pixel. We confirmed that the multi-nodes structure is effective to increase charge collection efficiency.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 731, 11 December 2013, Pages 74-78
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 731, 11 December 2013, Pages 74-78
نویسندگان
Shinya Nakashima, Syukyo Gando Ryu, Takaaki Tanaka, Takeshi Go Tsuru, Ayaki Takeda, Yasuo Arai, Toshifumi Imamura, Takafumi Ohmoto, Atsushi Iwata,