Recent results of the ATLAS upgrade planar pixel sensors R&D project

An overview of the recent accomplishments obtained within the ATLAS Planar Pixel Sensor R&D Project is given. The performance in terms of charge collection and tracking efficiency, obtained with radioactive sources in the laboratory and at beam tests, is presented for devices built from sensors of different vendors connected to either the present ATLAS read-out chip FE-I3 or the new Insertable B-Layer read-out chip FE-I4. The devices, with a thickness varying between 75μm and 300μm, were irradiated to several fluences up to 2×1016neq/cm2. Finally, the different approaches followed inside the collaboration to achieve slim or active edges for planar pixel sensors are presented.